The IRFP260 Mosfet transistor is a high-power device that is designed for use in a variety of applications, including power switching, audio amplifiers, and DC-DC converters. This N-channel Mosfet transistor has a maximum drain-source voltage of 600V and a maximum drain current of 57A. It also has a low on-resistance and fast switching speed, making it ideal for high-frequency switching applications. Additionally, the IRFP260 has a high input impedance and low input capacitance, which allows for improved efficiency and reduced power loss.
One of the key features of the IRFP260 is its ability to handle high power levels while maintaining a low thermal resistance. This makes it a great choice for applications that require high power dissipation, such as in power supplies and motor drives. The IRFP260 also has a low gate-source threshold voltage, which allows for easy switching and improved efficiency.
The IRFP260 is also designed for use in audio amplifiers and other high-frequency applications. It has a high frequency capability and a low input capacitance, which allows for improved audio quality and reduced distortion. Additionally, the IRFP260 has a low input capacitance and a high output impedance, which allows for improved efficiency and reduced power loss.
The IRFP260 Mosfet transistor is available in a TO-247 package, which allows for easy installation and improved thermal dissipation. It is also RoHS compliant and meets UL standards for safety and reliability. With its high power handling capabilities, fast switching speed, and low thermal resistance, the IRFP260 is an excellent choice for a wide range of applications.
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 280 W
Maximum Drain-Source Voltage 'Vds': 200 V
Maximum Gate-Source Voltage 'Vgs': 20 V
Maximum Gate-Threshold Voltage 'Vgs(th)': 4 V
Maximum Drain Current 'Id': 46 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 230(max) nC
Rise Time (tr): 120 nS
Drain-Source Capacitance (Cd): 1200 pF
Maximum Drain-Source On-State Resistance (Rds): 0.055 Ohm
10pcs IRFP260N Power MOSFET IRFP260 N-Channel Transistor 50A 200V TO-247